PSC1665B1Z Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: PSC1665B1/NBD2/BARE DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 475pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
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Technische Details PSC1665B1Z Nexperia USA Inc.
Description: PSC1665B1/NBD2/BARE DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 475pF @ 1V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: Die, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A, Current - Reverse Leakage @ Vr: 180 µA @ 650 V.
Weitere Produktangebote PSC1665B1Z
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| PSC1665B1Z | Hersteller : Nexperia |
SiC Schottky Diodes PSC1665B1/NBD2/Bare Die |
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