PSC1665J-QJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: SIC DIODE 650V 16A D2PAK AUT
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 475pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: D2PAK R2P
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Qualification: AEC-Q101
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Technische Details PSC1665J-QJ Nexperia USA Inc.
Description: SIC DIODE 650V 16A D2PAK AUT, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 475pF @ 1V, 1MHz, Current - Average Rectified (Io): 16A, Supplier Device Package: D2PAK R2P, Operating Temperature - Junction: 175°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A, Current - Reverse Leakage @ Vr: 180 µA @ 650 V, Qualification: AEC-Q101.
Weitere Produktangebote PSC1665J-QJ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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PSC1665J-QJ | Nexperia USA Inc. |
Description: SIC DIODE 650V 16A D2PAK AUT Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 475pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: D2PAK R2P Operating Temperature - Junction: 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A Current - Reverse Leakage @ Vr: 180 µA @ 650 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
PSC1665J-QJ | Nexperia |
SiC Schottky Diodes PSC1665J-Q/SOT8018/TO263-2L |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PSC1665J-QJ |
|
Hersteller: Nexperia USA Inc.
Description: SIC DIODE 650V 16A D2PAK AUT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 475pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: D2PAK R2P
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Qualification: AEC-Q101
Description: SIC DIODE 650V 16A D2PAK AUT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 475pF @ 1V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: D2PAK R2P
Operating Temperature - Junction: 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PSC1665J-QJ |
|
Hersteller: Nexperia
SiC Schottky Diodes PSC1665J-Q/SOT8018/TO263-2L
SiC Schottky Diodes PSC1665J-Q/SOT8018/TO263-2L
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH