| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.55 EUR |
| 10+ | 3.61 EUR |
| 100+ | 2.51 EUR |
| 500+ | 1.93 EUR |
| 800+ | 1.78 EUR |
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Technische Details PSMB032N08NS1_R2_00601 Panjit
Description: 80V/ 3.4MOHM / MV MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 7 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Part Status: Active, Supplier Device Package: TO-263, Vgs(th) (Max) @ Id: 3.75V @ 250µA, Power Dissipation (Max): 156W (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 161A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMB032N08NS1_R2_00601 nach Preis ab 2.5 EUR bis 5.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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PSMB032N08NS1_R2_00601 | Panjit International Inc. |
 Description: 80V/ 3.4MOHM / MV MOSFETTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 7 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Part Status: Active Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 3.75V @ 250µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 161A (Tc) FET Type: N-Channel |
auf Bestellung 755 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMB032N08NS1_R2_00601 |
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Hersteller: Panjit International Inc.
Description: 80V/ 3.4MOHM / MV MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 7 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
FET Type: N-Channel
Description: 80V/ 3.4MOHM / MV MOSFET
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 7 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Part Status: Active
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 3.75V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
FET Type: N-Channel
auf Bestellung 755 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.57 EUR |
| 10+ | 3.62 EUR |
| 100+ | 2.5 EUR |