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PSMB055N08NS1-R2 Panjit



Hersteller: Panjit
MOSFETs TO263 N CHAN 85V
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Technische Details PSMB055N08NS1-R2 Panjit

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 80V, Drain current: 108A, Power dissipation: 113.6W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 7mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 360A, Gate charge: 65.8nC.

Weitere Produktangebote PSMB055N08NS1-R2

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PSMB055N08NS1_R2_00601 PSMB055N08NS1_R2_00601 PanJit Semiconductor PSMB055N08NS1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 360A
Gate charge: 65.8nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB055N08NS1_R2_00601 PSMB055N08NS1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 360A
Gate charge: 65.8nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH