PSMN004-55W,127 NXP USA Inc.
Hersteller: NXP USA Inc.Description: MOSFET N-CH 55V 100A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
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Technische Details PSMN004-55W,127 NXP USA Inc.
Description: MOSFET N-CH 55V 100A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-247, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN004-55W,127 | Hersteller : NXP Semiconductors |
MOSFET RAIL PWR-MOS |
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