PSMN006-20K,518 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 20V 32A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 2.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ)
Power Dissipation (Max): 8.3W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Technische Details PSMN006-20K,518 Nexperia USA Inc.
Description: MOSFET N-CH 20V 32A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 2.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Obsolete, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 700mV @ 1mA (Typ), Power Dissipation (Max): 8.3W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN006-20K,518
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
PSMN006-20K,518 | Nexperia |
Nexperia TAPE13 PWR-MOS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PSMN006-20K,518 |
|
Hersteller: Nexperia
Nexperia TAPE13 PWR-MOS
Nexperia TAPE13 PWR-MOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH