PSMN010-80YLX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 80V 84A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 194W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 1.06 EUR |
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Technische Details PSMN010-80YLX Nexperia USA Inc.
Description: MOSFET N-CH 80V 84A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 194W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN010-80YLX nach Preis ab 0.81 EUR bis 3.57 EUR
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PSMN010-80YLX | Hersteller : Nexperia |
MOSFETs SOT669 N-CH 80V 84A |
auf Bestellung 3437 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN010-80YLX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 84A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 44.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6506 pF @ 25 V |
auf Bestellung 1547 Stücke: Lieferzeit 10-14 Tag (e) |
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