PSMN011-60MSX NEXPERIA
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 244A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 82+ | 0.87 EUR |
| 92+ | 0.79 EUR |
| 100+ | 0.73 EUR |
| 250+ | 0.69 EUR |
| 500+ | 0.62 EUR |
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Technische Details PSMN011-60MSX NEXPERIA
Description: MOSFET N-CH 60V 61A LFPAK33, Input Capacitance (Ciss) (Max) @ Vds: 1368 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK33, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 91W (Tc), Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN011-60MSX nach Preis ab 0.44 EUR bis 2.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PSMN011-60MSX | Nexperia |
MOSFETs SOT1210 N-CH 60V 61A |
auf Bestellung 1482 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN011-60MSX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 61A LFPAK33 Input Capacitance (Ciss) (Max) @ Vds: 1368 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK33 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 91W (Tc) Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 61A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Cut Tape (CT) |
auf Bestellung 642 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PSMN011-60MSX |
|
Hersteller: Nexperia
MOSFETs SOT1210 N-CH 60V 61A
MOSFETs SOT1210 N-CH 60V 61A
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.85 EUR |
| 10+ | 1.01 EUR |
| 100+ | 0.8 EUR |
| 1000+ | 0.61 EUR |
| 1500+ | 0.44 EUR |
| PSMN011-60MSX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 61A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1368 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 61A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 1368 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 91W (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
auf Bestellung 642 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.18 EUR |
| 13+ | 1.37 EUR |
| 50+ | 1.01 EUR |
| 100+ | 0.9 EUR |