PSMN013-100PS,127 NXP Semiconductors
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Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 187+ | 2.94 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.44 EUR |
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Technische Details PSMN013-100PS,127 NXP Semiconductors
Description: MOSFET N-CH 100V 68A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 68A (Tc), Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V.
Weitere Produktangebote PSMN013-100PS,127
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PSMN013-100PS,127 | Hersteller : Nexperia |
 Trans MOSFET N-CH 100V 68A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
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PSMN013-100PS,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 68A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 68A (Tc) Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 50 V |
Produkt ist nicht verfügbar |
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PSMN013-100PS,127 | Hersteller : Nexperia |
MOSFET PSMN013-100PS/SOT78/SIL3P |
Produkt ist nicht verfügbar |
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PSMN013-100PS,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 68A; Idm: 272A; 170W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 68A Pulsed drain current: 272A Power dissipation: 170W Case: SOT78; TO220AB On-state resistance: 10.8mΩ Mounting: THT Gate charge: 59nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |