PSMN013-30YLC,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 32A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 1.95V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 15 V
| Anzahl | Preis |
|---|---|
| 1500+ | 0.44 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN013-30YLC,115 Nexperia USA Inc.
Description: MOSFET N-CH 30V 32A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V, Power Dissipation (Max): 26W (Tc), Vgs(th) (Max) @ Id: 1.95V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 15 V.
Weitere Produktangebote PSMN013-30YLC,115 nach Preis ab 0.28 EUR bis 1.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PSMN013-30YLC,115 | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 26W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 27.2mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1733 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
PSMN013-30YLC,115 | Hersteller : Nexperia |
MOSFETs SOT669 N-CH 30V 32A |
auf Bestellung 8087 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
|
PSMN013-30YLC,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 32A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 1.95V @ 1mA Power Dissipation (Max): 26W (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
auf Bestellung 4298 Stücke: Lieferzeit 10-14 Tag (e) |
|