auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 117+ | 1.24 EUR |
| 119+ | 1.18 EUR |
| 153+ | 0.88 EUR |
| 257+ | 0.5 EUR |
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Technische Details PSMN013-80YS,115 Nexperia
Description: MOSFET N-CH 80V 60A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 12.9mOhm @ 15A, 10V, Power Dissipation (Max): 106W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V.
Weitere Produktangebote PSMN013-80YS,115 nach Preis ab 1.26 EUR bis 2.99 EUR
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PSMN013-80YS,115 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 80V 60A LFPAK56Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 15A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V |
auf Bestellung 295 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN013-80YS,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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PSMN013-80YS,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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PSMN013-80YS,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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PSMN013-80YS,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 60A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 15A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V |
Produkt ist nicht verfügbar |
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PSMN013-80YS,115 | Hersteller : Nexperia |
MOSFETs PSMN013-80YS/SOT669/LFPAK |
Produkt ist nicht verfügbar |