PSMN013-80YS,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 80V 60A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 12.9mOhm @ 15A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.66 EUR |
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Technische Details PSMN013-80YS,115 Nexperia USA Inc.
Description: MOSFET N-CH 80V 60A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 12.9mOhm @ 15A, 10V, Power Dissipation (Max): 106W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V.
Weitere Produktangebote PSMN013-80YS,115 nach Preis ab 0.51 EUR bis 2.02 EUR
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PSMN013-80YS,115 | Hersteller : Nexperia |
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auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN013-80YS,115 | Hersteller : Nexperia |
MOSFET PSMN013-80YS/SOT669/LFPAK |
auf Bestellung 1462 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN013-80YS,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 60A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 12.9mOhm @ 15A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V |
auf Bestellung 4825 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN013-80YS,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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PSMN013-80YS,115 | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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| PSMN013-80YS,115 | Hersteller : NEXPERIA |
PSMN013-80YS.115 SMD N channel transistors |
Produkt ist nicht verfügbar |
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PSMN013-80YS,115 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 60A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |