PSMN015-110P,127 NXP Semiconductors
auf Bestellung 902 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 257+ | 2.11 EUR |
| 500+ | 1.85 EUR |
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Technische Details PSMN015-110P,127 NXP Semiconductors
Description: MOSFET N-CH 110V 75A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 110 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V.
Weitere Produktangebote PSMN015-110P,127 nach Preis ab 1.85 EUR bis 2.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| PSMN015-110P,127 | Hersteller : NXP Semiconductors |
 Trans MOSFET N-CH 110V 75A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 639 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN015-110P,127 | Hersteller : NXP |
Description: NXP - PSMN015-110P,127 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1562 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN015-110P,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH Si 110V 75A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
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PSMN015-110P,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 110V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 110 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V |
Produkt ist nicht verfügbar |
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PSMN015-110P,127 | Hersteller : Nexperia |
MOSFET RAIL PWR-MOS |
Produkt ist nicht verfügbar |