PSMN016-100PS,127 NEXPERIA
Hersteller: NEXPERIACategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 230A; 148W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Pulsed drain current: 230A
Power dissipation: 148W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 36.4mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 2.70 EUR |
| 43+ | 1.70 EUR |
| 45+ | 1.60 EUR |
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Technische Details PSMN016-100PS,127 NEXPERIA
Description: MOSFET N-CH 100V 57A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 57A (Tj), Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V, Power Dissipation (Max): 148W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2404 pF @ 50 V.
Weitere Produktangebote PSMN016-100PS,127 nach Preis ab 1.50 EUR bis 4.89 EUR
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PSMN016-100PS,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 57A; Idm: 230A; 148W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 57A Pulsed drain current: 230A Power dissipation: 148W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 36.4mΩ Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 101 Stücke: Lieferzeit 7-14 Tag (e) |
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PSMN016-100PS,127 | Hersteller : Nexperia |
MOSFET PSMN016-100PS/SOT78/SIL3P |
auf Bestellung 1289 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN016-100PS,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 57A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Tj) Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V Power Dissipation (Max): 148W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2404 pF @ 50 V |
auf Bestellung 6054 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN016-100PS,127 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN016-100PS,127 | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
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PSMN016-100PS,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |