| Anzahl | Preis |
|---|---|
| 2+ | 1.95 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.21 EUR |
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Technische Details PSMN017-30BL,118 Nexperia
Description: MOSFET N-CH 30V 32A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.15V @ 1mA, Power Dissipation (Max): 47W (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN017-30BL,118 nach Preis ab 1.71 EUR bis 2.69 EUR
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PSMN017-30BL,118 | Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 32A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.15V @ 1mA Power Dissipation (Max): 47W (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 32A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 91 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN017-30BL,118 |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 32A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 32A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.69 EUR |
| 11+ | 1.71 EUR |