auf Bestellung 540 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 432+ | 1.27 EUR |
| 500+ | 1.1 EUR |
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Technische Details PSMN017-30EL,127 Nexperia
Description: MOSFET N-CH 30V 32A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Power Dissipation (Max): 47W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: I2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V.
Weitere Produktangebote PSMN017-30EL,127 nach Preis ab 0.98 EUR bis 1.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN017-30EL,127 | Hersteller : Nexperia |
 MOSFET N-chan 30 V 17 mohm MOSFET in I2PAK |
auf Bestellung 4995 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN017-30EL,127 | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 30V 32A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 2875 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN017-30EL,127 | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 30V 32A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 4600 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN017-30EL,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 30V 32A 3-Pin(3+Tab) I2PAK Rail |
Produkt ist nicht verfügbar |
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PSMN017-30EL,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 32A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V |
Produkt ist nicht verfügbar |