| Anzahl | Privatkunde |
|---|---|
| 387+ | 0.45 EUR |
| 393+ | 0.44 EUR |
| 399+ | 0.42 EUR |
| 406+ | 0.4 EUR |
| 500+ | 0.39 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN018-100ESFQ Nexperia
Description: NEXPERIA PSMN018 - NEXTPOWER 100, Input Capacitance (Ciss) (Max) @ Vds: 1482 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 111W (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 53A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Bulk.
Weitere Produktangebote PSMN018-100ESFQ nach Preis ab 0.33 EUR bis 2.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PSMN018-100ESFQ | Nexperia |
Trans MOSFET N-CH 100V 53A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
PSMN018-100ESFQ | Nexperia |
Trans MOSFET N-CH 100V 53A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 4980 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
PSMN018-100ESFQ | NXP Semiconductors |
Description: NEXPERIA PSMN018 - NEXTPOWER 100Input Capacitance (Ciss) (Max) @ Vds: 1482 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 111W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 53A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Bulk |
auf Bestellung 4976 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| PSMN018-100ESFQ | NXP Semiconductors |
PSMN018-100ESFQ |
auf Bestellung 4976 Stücke: Lieferzeit 14-21 Tag (e) |
|
| PSMN018-100ESFQ |
![]() |
Hersteller: Nexperia
Trans MOSFET N-CH 100V 53A 3-Pin(3+Tab) I2PAK Rail
Trans MOSFET N-CH 100V 53A 3-Pin(3+Tab) I2PAK Rail
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 375+ | 0.46 EUR |
| 381+ | 0.44 EUR |
| 387+ | 0.42 EUR |
| 393+ | 0.39 EUR |
| 399+ | 0.37 EUR |
| 406+ | 0.36 EUR |
| 500+ | 0.33 EUR |
| PSMN018-100ESFQ |
![]() |
Hersteller: Nexperia
Trans MOSFET N-CH 100V 53A 3-Pin(3+Tab) I2PAK Rail
Trans MOSFET N-CH 100V 53A 3-Pin(3+Tab) I2PAK Rail
auf Bestellung 4980 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 164+ | 1.06 EUR |
| 172+ | 0.98 EUR |
| 176+ | 0.92 EUR |
| 179+ | 0.87 EUR |
| 183+ | 0.82 EUR |
| 500+ | 0.51 EUR |
| PSMN018-100ESFQ |
![]() |
Hersteller: NXP Semiconductors
Description: NEXPERIA PSMN018 - NEXTPOWER 100
Input Capacitance (Ciss) (Max) @ Vds: 1482 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 111W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
Description: NEXPERIA PSMN018 - NEXTPOWER 100
Input Capacitance (Ciss) (Max) @ Vds: 1482 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 111W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 53A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
auf Bestellung 4976 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 263+ | 2.06 EUR |
| PSMN018-100ESFQ |
![]() |
Hersteller: NXP Semiconductors
PSMN018-100ESFQ
PSMN018-100ESFQ
auf Bestellung 4976 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 329+ | 1.99 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.59 EUR |



