PSMN019-100YLX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.68 EUR |
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Technische Details PSMN019-100YLX Nexperia USA Inc.
Description: MOSFET N-CH 100V 56A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 72.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V.
Weitere Produktangebote PSMN019-100YLX nach Preis ab 0.61 EUR bis 0.83 EUR
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PSMN019-100YLX | Hersteller : Nexperia |
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auf Bestellung 19415 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN019-100YLX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 56A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 72.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V |
auf Bestellung 2902 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN019-100YLX | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 56A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN019-100YLX | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 56A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN019-100YLX | Hersteller : Nexperia |
Trans MOSFET N-CH 100V 56A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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PSMN019-100YLX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 100V 56A 5-Pin(4+Tab) LFPAK T/R |
Produkt ist nicht verfügbar |
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