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PSMN019-100YLX Nexperia USA Inc.


PSMN019-100YL.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+0.83 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details PSMN019-100YLX Nexperia USA Inc.

Description: MOSFET N-CH 100V 56A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 56A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 72.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V.

Weitere Produktangebote PSMN019-100YLX nach Preis ab 0.82 EUR bis 3.08 EUR

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PSMN019-100YLX PSMN019-100YLX Nexperia USA Inc. PSMN019-100YL.pdf Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.83 EUR
10+1.8 EUR
100+1.2 EUR
500+0.95 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN019-100YLX PSMN019-100YLX Nexperia PSMN019-100YL.pdf MOSFETs SOT669 100V 56A
auf Bestellung 4714 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.08 EUR
10+1.95 EUR
50+1.45 EUR
100+1.29 EUR
1500+0.87 EUR
3000+0.82 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PSMN019-100YLX PSMN019-100YL.pdf
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 56A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 15A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5085 pF @ 25 V
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.83 EUR
10+1.8 EUR
100+1.2 EUR
500+0.95 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN019-100YLX PSMN019-100YL.pdf
Hersteller: Nexperia
MOSFETs SOT669 100V 56A
auf Bestellung 4714 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.08 EUR
10+1.95 EUR
50+1.45 EUR
100+1.29 EUR
1500+0.87 EUR
3000+0.82 EUR
Im Einkaufswagen  Stück im Wert von  UAH