PSMN022-30BL,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
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Technische Details PSMN022-30BL,118 Nexperia USA Inc.
Description: MOSFET N-CH 30V 30A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.15V @ 1mA, Power Dissipation (Max): 41W (Tc), Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V.
Weitere Produktangebote PSMN022-30BL,118
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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PSMN022-30BL,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 30A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.15V @ 1mA Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
PSMN022-30BL,118 | Nexperia |
MOSFET Std N-chanMOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PSMN022-30BL,118 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 30A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.15V @ 1mA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PSMN022-30BL,118 |
|
Hersteller: Nexperia
MOSFET Std N-chanMOSFET
MOSFET Std N-chanMOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH