PSMN028-100YS,115 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 42A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1634 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 27.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.78 EUR |
| 3000+ | 0.72 EUR |
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Technische Details PSMN028-100YS,115 Nexperia USA Inc.
Description: MOSFET N-CH 100V 42A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 1634 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 89W (Tc), Rds On (Max) @ Id, Vgs: 27.5mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN028-100YS,115 nach Preis ab 0.55 EUR bis 2.75 EUR
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PSMN028-100YS,115 | Hersteller : Nexperia |
MOSFETs PSMN028-100YS/SOT669/LFPAK |
auf Bestellung 7208 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN028-100YS,115 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 42A LFPAK56 Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 27.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1634 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA |
auf Bestellung 7315 Stücke: Lieferzeit 10-14 Tag (e) |
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