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Technische Details PSMN030-60YS,115 Nexperia
Description: MOSFET N-CH 60V 29A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 24.7mOhm @ 15A, 10V, Power Dissipation (Max): 56W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 686 pF @ 30 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30.
Weitere Produktangebote PSMN030-60YS,115 nach Preis ab 0.28 EUR bis 1.92 EUR
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PSMN030-60YS,115 | Nexperia |
 Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN030-60YS,115 | Nexperia |
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN030-60YS,115 | Nexperia |
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN030-60YS,115 | Nexperia |
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 3963 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN030-60YS,115 | Nexperia |
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 3963 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN030-60YS,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 29A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 24.7mOhm @ 15A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 686 pF @ 30 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30 |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN030-60YS,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 29A Pulsed drain current: 116A Power dissipation: 56W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 49.6mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1471 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN030-60YS,115 | Nexperia |
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 727830 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN030-60YS,115 | Nexperia |
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN030-60YS,115 | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 29A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 24.7mOhm @ 15A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 686 pF @ 30 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30 |
auf Bestellung 4870 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN030-60YS,115 | Nexperia |
MOSFETs PSMN030-60YS/SOT669/LFPAK |
auf Bestellung 2662 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN030-60YS,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.36 EUR |
| PSMN030-60YS,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.36 EUR |
| 3000+ | 0.31 EUR |
| PSMN030-60YS,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.36 EUR |
| PSMN030-60YS,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 3963 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 387+ | 0.38 EUR |
| 391+ | 0.37 EUR |
| 394+ | 0.36 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.34 EUR |
| 3000+ | 0.33 EUR |
| PSMN030-60YS,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 3963 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 379+ | 0.39 EUR |
| 383+ | 0.37 EUR |
| 387+ | 0.35 EUR |
| 391+ | 0.33 EUR |
| 394+ | 0.32 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.29 EUR |
| 3000+ | 0.28 EUR |
| PSMN030-60YS,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 29A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 24.7mOhm @ 15A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 686 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
Description: MOSFET N-CH 60V 29A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 24.7mOhm @ 15A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 686 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.43 EUR |
| 3000+ | 0.4 EUR |
| 4500+ | 0.38 EUR |
| PSMN030-60YS,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Pulsed drain current: 116A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Pulsed drain current: 116A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1471 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 139+ | 0.52 EUR |
| 154+ | 0.46 EUR |
| 167+ | 0.43 EUR |
| 250+ | 0.41 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.36 EUR |
| PSMN030-60YS,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 727830 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 629+ | 0.87 EUR |
| 1000+ | 0.79 EUR |
| 10000+ | 0.69 EUR |
| 100000+ | 0.57 EUR |
| PSMN030-60YS,115 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 60V 29A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 629+ | 0.87 EUR |
| 1000+ | 0.79 EUR |
| 10000+ | 0.69 EUR |
| PSMN030-60YS,115 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 29A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 24.7mOhm @ 15A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 686 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
Description: MOSFET N-CH 60V 29A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 24.7mOhm @ 15A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 686 pF @ 30 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 30
auf Bestellung 4870 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.62 EUR |
| 18+ | 1 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.51 EUR |
| PSMN030-60YS,115 |
|
Hersteller: Nexperia
MOSFETs PSMN030-60YS/SOT669/LFPAK
MOSFETs PSMN030-60YS/SOT669/LFPAK
auf Bestellung 2662 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.92 EUR |
| 10+ | 1.2 EUR |
| 50+ | 0.88 EUR |
| 100+ | 0.78 EUR |
| 1500+ | 0.51 EUR |
| 3000+ | 0.47 EUR |