PSMN040-200W,127 NXP USA Inc.
Hersteller: NXP USA Inc.Description: MOSFET N-CH 200V 50A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-247
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 25 V
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN040-200W,127 NXP USA Inc.
Description: MOSFET N-CH 200V 50A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 25A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-247, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9530 pF @ 25 V.
Weitere Produktangebote PSMN040-200W,127
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
PSMN040-200W,127 | Hersteller : NXP Semiconductors |
MOSFET RAIL PWR-MOS |
Produkt ist nicht verfügbar |