Technische Details PSMN057-200B,118 Nexperia
Description: MOSFET N-CH 200V 39A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Tc), Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V.
Weitere Produktangebote PSMN057-200B,118 nach Preis ab 1.64 EUR bis 5.74 EUR
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PSMN057-200B,118 | Nexperia |
Trans MOSFET N-CH Si 200V 39A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN057-200B,118 | Nexperia |
Trans MOSFET N-CH Si 200V 39A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN057-200B,118 | Nexperia |
Trans MOSFET N-CH Si 200V 39A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN057-200B,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 200V 39A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN057-200B,118 | Nexperia |
MOSFETs TO263 200V 39A N-CH TRCHMOS |
auf Bestellung 2944 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN057-200B,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 200V 39A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V |
auf Bestellung 1864 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN057-200B,118 |
![]() |
Hersteller: Nexperia
Trans MOSFET N-CH Si 200V 39A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 200V 39A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 2400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 1.95 EUR |
| 1600+ | 1.77 EUR |
| 2400+ | 1.64 EUR |
| PSMN057-200B,118 |
![]() |
Hersteller: Nexperia
Trans MOSFET N-CH Si 200V 39A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 200V 39A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4800+ | 2 EUR |
| PSMN057-200B,118 |
![]() |
Hersteller: Nexperia
Trans MOSFET N-CH Si 200V 39A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 200V 39A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 4800 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4800+ | 2 EUR |
| PSMN057-200B,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 39A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Description: MOSFET N-CH 200V 39A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 2.02 EUR |
| 1600+ | 1.89 EUR |
| PSMN057-200B,118 |
![]() |
Hersteller: Nexperia
MOSFETs TO263 200V 39A N-CH TRCHMOS
MOSFETs TO263 200V 39A N-CH TRCHMOS
auf Bestellung 2944 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.42 EUR |
| 10+ | 3.54 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2.02 EUR |
| PSMN057-200B,118 |
![]() |
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 200V 39A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
Description: MOSFET N-CH 200V 39A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 25 V
auf Bestellung 1864 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.74 EUR |
| 10+ | 3.74 EUR |
| 100+ | 2.61 EUR |




