PSMN070-200P,127 Nexperia
| Anzahl | Privatkunde |
|---|---|
| 77+ | 2.27 EUR |
| 80+ | 2.11 EUR |
| 82+ | 1.98 EUR |
| 83+ | 1.88 EUR |
| 108+ | 1.39 EUR |
| 500+ | 1.32 EUR |
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Technische Details PSMN070-200P,127 Nexperia
Description: NEXPERIA PSMN070-200P - 35A, 200, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc).
Weitere Produktangebote PSMN070-200P,127 nach Preis ab 2.37 EUR bis 4.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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PSMN070-200P,127 | Nexperia |
 Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN070-200P,127 | NXP Semiconductors |
Description: NEXPERIA PSMN070-200P - 35A, 200 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) |
auf Bestellung 8812 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN070-200P,127 | NXP Semiconductors |
Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 3992 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| PSMN070-200P,127 | NXP Semiconductors |
Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| PSMN070-200P,127 | NXP Semiconductors |
Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||
| PSMN070-200P,127 | NXP Semiconductors |
Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 950 Stücke: Lieferzeit 14-21 Tag (e) |
|
| PSMN070-200P,127 |
|
Hersteller: Nexperia
Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail
Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 158+ | 4.13 EUR |
| PSMN070-200P,127 |
|
Hersteller: NXP Semiconductors
Description: NEXPERIA PSMN070-200P - 35A, 200
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Description: NEXPERIA PSMN070-200P - 35A, 200
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 4570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
auf Bestellung 8812 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 267+ | 2.37 EUR |
| PSMN070-200P,127 |
|
Hersteller: NXP Semiconductors
Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail
Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 3992 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 177+ | 3.7 EUR |
| 500+ | 3.45 EUR |
| 1000+ | 3.19 EUR |
| PSMN070-200P,127 |
|
Hersteller: NXP Semiconductors
Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail
Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 177+ | 3.7 EUR |
| 500+ | 3.45 EUR |
| 1000+ | 3.19 EUR |
| PSMN070-200P,127 |
|
Hersteller: NXP Semiconductors
Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail
Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 177+ | 3.7 EUR |
| 500+ | 3.45 EUR |
| PSMN070-200P,127 |
|
Hersteller: NXP Semiconductors
Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail
Trans MOSFET N-CH Si 200V 35A 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 177+ | 3.7 EUR |
| 500+ | 3.45 EUR |