PSMN071-100NSEX Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PSMN071-100NSE/SOT1220-2/DFN20
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 82.3mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: DFN2020M-6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 559 pF @ 50 V
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN071-100NSEX Nexperia USA Inc.
Description: PSMN071-100NSE/SOT1220-2/DFN20, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc), Rds On (Max) @ Id, Vgs: 82.3mOhm @ 5A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: DFN2020M-6, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 559 pF @ 50 V.
Weitere Produktangebote PSMN071-100NSEX nach Preis ab 0.27 EUR bis 1.37 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PSMN071-100NSEX | Nexperia USA Inc. |
Description: PSMN071-100NSE/SOT1220-2/DFN20 Input Capacitance (Ciss) (Max) @ Vds: 559 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DFN2020M-6 Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 31W (Tc) Rds On (Max) @ Id, Vgs: 82.3mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
PSMN071-100NSEX | Nexperia |
MOSFETs N-channel 100 V, 82 mOhm standard level ASFET with enhanced SOA in DFN2020. Designedfor high power PoE, inrush management, eFuse and relay replacement |
auf Bestellung 749 Stücke: Lieferzeit 10-14 Tag (e) |
|
| PSMN071-100NSEX |
|
Hersteller: Nexperia USA Inc.
Description: PSMN071-100NSE/SOT1220-2/DFN20
Input Capacitance (Ciss) (Max) @ Vds: 559 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 82.3mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: PSMN071-100NSE/SOT1220-2/DFN20
Input Capacitance (Ciss) (Max) @ Vds: 559 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DFN2020M-6
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 31W (Tc)
Rds On (Max) @ Id, Vgs: 82.3mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.92 EUR |
| 30+ | 0.71 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.27 EUR |
| PSMN071-100NSEX |
|
Hersteller: Nexperia
MOSFETs N-channel 100 V, 82 mOhm standard level ASFET with enhanced SOA in DFN2020. Designedfor high power PoE, inrush management, eFuse and relay replacement
MOSFETs N-channel 100 V, 82 mOhm standard level ASFET with enhanced SOA in DFN2020. Designedfor high power PoE, inrush management, eFuse and relay replacement
auf Bestellung 749 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.37 EUR |
| 10+ | 0.74 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.37 EUR |