| Anzahl | Preis |
|---|---|
| 1+ | 6.04 EUR |
| 10+ | 3.94 EUR |
| 100+ | 2.87 EUR |
| 500+ | 2.41 EUR |
| 1000+ | 2.24 EUR |
| 1500+ | 2.11 EUR |
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Technische Details PSMN1R0-40YSHX Nexperia
Description: MOSFET N-CH 40V 290A LFPAK56, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LFPAK56; Power-SO8, Vgs(th) (Max) @ Id: 3.6V @ 1mA, Power Dissipation (Max): 333W (Tc), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 290A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1023, 4-LFPAK, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 9433 pF @ 20 V.
Weitere Produktangebote PSMN1R0-40YSHX nach Preis ab 2.93 EUR bis 7.62 EUR
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PSMN1R0-40YSHX | Nexperia USA Inc. |
 Description: MOSFET N-CH 40V 290A LFPAK56Supplier Device Package: LFPAK56; Power-SO8 Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 333W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 290A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 9433 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 5827 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN1R0-40YSHX |
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Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 290A LFPAK56
Supplier Device Package: LFPAK56; Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 333W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 290A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9433 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 40V 290A LFPAK56
Supplier Device Package: LFPAK56; Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 333W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 290A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1023, 4-LFPAK
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9433 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 5827 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.62 EUR |
| 10+ | 5.03 EUR |
| 100+ | 3.56 EUR |
| 500+ | 2.93 EUR |