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PSMN1R1-100CSEJ

PSMN1R1-100CSEJ Nexperia

PSMN1R1-100CSE.pdf Hersteller: Nexperia
MOSFETs SOT8000 100V 430A
auf Bestellung 1064 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+15.47 EUR
10+12.04 EUR
25+11.19 EUR
100+10.23 EUR
250+9.79 EUR
500+9.52 EUR
1000+8.92 EUR
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Technische Details PSMN1R1-100CSEJ Nexperia

Description: PSMN1R1-100CSE/SOT8005A/CCPAK1, Packaging: Tape & Reel (TR), Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 430A (Tc), Rds On (Max) @ Id, Vgs: 1.09mOhm @ 25A, 10V, Power Dissipation (Max): 1.55kW (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: CCPAK1212i, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 509 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 36460 pF @ 50 V.

Weitere Produktangebote PSMN1R1-100CSEJ nach Preis ab 11.26 EUR bis 15.59 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PSMN1R1-100CSEJ PSMN1R1-100CSEJ Hersteller : Nexperia USA Inc. PSMN1R1-100CSE.pdf Description: PSMN1R1-100CSE/SOT8005A/CCPAK1
Packaging: Cut Tape (CT)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tc)
Rds On (Max) @ Id, Vgs: 1.09mOhm @ 25A, 10V
Power Dissipation (Max): 1.55kW (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: CCPAK1212i
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 509 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36460 pF @ 50 V
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.59 EUR
10+12.13 EUR
25+11.26 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R1-100CSEJ PSMN1R1-100CSEJ Hersteller : Nexperia USA Inc. PSMN1R1-100CSE.pdf Description: PSMN1R1-100CSE/SOT8005A/CCPAK1
Packaging: Tape & Reel (TR)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 430A (Tc)
Rds On (Max) @ Id, Vgs: 1.09mOhm @ 25A, 10V
Power Dissipation (Max): 1.55kW (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: CCPAK1212i
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 509 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 36460 pF @ 50 V
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Im Einkaufswagen  Stück im Wert von  UAH