| Anzahl | Privatkunde |
|---|---|
| 155+ | 4.32 EUR |
| 500+ | 4.03 EUR |
| 1000+ | 3.71 EUR |
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Technische Details PSMN1R1-30EL,127 Nexperia
Description: MOSFET N-CH 30V 120A I2PAK, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V, Power Dissipation (Max): 338W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: I2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V.
Weitere Produktangebote PSMN1R1-30EL,127 nach Preis ab 3.71 EUR bis 4.66 EUR
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PSMN1R1-30EL,127 | Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 120A I2PAKPackaging: Bulk Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V |
auf Bestellung 4999 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| PSMN1R1-30EL,127 | NXP Semiconductors |
Trans MOSFET N-CH 30V 120A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 7581 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| PSMN1R1-30EL,127 | NXP Semiconductors |
Trans MOSFET N-CH 30V 120A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 3507 Stücke: Lieferzeit 14-21 Tag (e) |
|
| PSMN1R1-30EL,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
Description: MOSFET N-CH 30V 120A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 243 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14850 pF @ 15 V
auf Bestellung 4999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 118+ | 4.66 EUR |
| PSMN1R1-30EL,127 |
|
Hersteller: NXP Semiconductors
Trans MOSFET N-CH 30V 120A 3-Pin(3+Tab) I2PAK Rail
Trans MOSFET N-CH 30V 120A 3-Pin(3+Tab) I2PAK Rail
auf Bestellung 7581 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 155+ | 4.32 EUR |
| 500+ | 4.03 EUR |
| 1000+ | 3.71 EUR |
| PSMN1R1-30EL,127 |
|
Hersteller: NXP Semiconductors
Trans MOSFET N-CH 30V 120A 3-Pin(3+Tab) I2PAK Rail
Trans MOSFET N-CH 30V 120A 3-Pin(3+Tab) I2PAK Rail
auf Bestellung 3507 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 155+ | 4.32 EUR |
| 500+ | 4.03 EUR |
| 1000+ | 3.71 EUR |