PSMN1R2-30YLD/2X Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PSMN1R2-30YLD/SOT669/LFPAK
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 2.2V @ 2mA
Power Dissipation (Max): 194W (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
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Technische Details PSMN1R2-30YLD/2X Nexperia USA Inc.
Description: PSMN1R2-30YLD/SOT669/LFPAK, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 2.2V @ 2mA, Power Dissipation (Max): 194W (Tc), Rds On (Max) @ Id, Vgs: 1.24mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Input Capacitance (Ciss) (Max) @ Vds: 4616 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).