PSMN1R2-55SLH Nexperia
Hersteller: Nexperia
MOSFET N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88
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Technische Details PSMN1R2-55SLH Nexperia
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A, Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V, Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: LFPAK88 (SOT1235), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Power Dissipation (Max): 375W (Ta), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 330A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1235, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN1R2-55SLH nach Preis ab 3.4 EUR bis 6.42 EUR
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PSMN1R2-55SLH | Nexperia USA Inc. |
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 375W (Ta) FET Feature: Schottky Diode (Isolated) Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 330A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Cut Tape (CT) |
auf Bestellung 1975 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN1R2-55SLH |
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Hersteller: Nexperia USA Inc.
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
Description: N-CHANNEL 55 V, 1.03 MOHM, 330 A
Input Capacitance (Ciss) (Max) @ Vds: 25773 pF @ 27 V
Gate Charge (Qg) (Max) @ Vgs: 395 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 375W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 1.03mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 330A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.42 EUR |
| 10+ | 5.77 EUR |
| 100+ | 4.73 EUR |
| 500+ | 4.03 EUR |
| 1000+ | 3.4 EUR |