PSMN1R4-100ASEJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: N-CHANNEL, 100 V, 1.36 MOHM, MOS
Packaging: Tape & Reel (TR)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 25A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: CCPAK1212
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 366 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26023 pF @ 50 V
Produktrezensionen
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Technische Details PSMN1R4-100ASEJ Nexperia USA Inc.
Description: NEXPERIA - PSMN1R4-100ASEJ - Leistungs-MOSFET, n-Kanal, 100 V, 340 A, 1360 µohm, CCPAK1212, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 100V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 340A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 3.6V, Verlustleistung: 935W, SVHC: Lead (25-Jun-2025), Bauform - Transistor: CCPAK1212, Anzahl der Pins: 12Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 1360µohm.
Weitere Produktangebote PSMN1R4-100ASEJ nach Preis ab 6.95 EUR bis 27.64 EUR
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PSMN1R4-100ASEJ | Nexperia |
MOSFETs PSMN1R4-100ASE/SOT8000A/CCPAK1 |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R4-100ASEJ | Nexperia USA Inc. |
Description: N-CHANNEL, 100 V, 1.36 MOHM, MOS Packaging: Cut Tape (CT) Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340A (Tc) Rds On (Max) @ Id, Vgs: 1.36mOhm @ 25A, 10V Power Dissipation (Max): 935W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: CCPAK1212 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 366 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 26023 pF @ 50 V |
auf Bestellung 1842 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R4-100ASEJ | NEXPERIA |
Description: NEXPERIA - PSMN1R4-100ASEJ - Leistungs-MOSFET, n-Kanal, 100 V, 340 A, 1360 µohm, CCPAK1212, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 340A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 3.6V Verlustleistung: 935W SVHC: Lead (25-Jun-2025) Bauform - Transistor: CCPAK1212 Anzahl der Pins: 12Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1360µohm |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN1R4-100ASEJ | NEXPERIA |
Description: NEXPERIA - PSMN1R4-100ASEJ - Leistungs-MOSFET, n-Kanal, 100 V, 340 A, 1360 µohm, CCPAK1212, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code SVHC: Lead (25-Jun-2025) rohsCompliant: Y-EX euEccn: NLR isCanonical: N hazardous: false Drain-Source-Durchgangswiderstand: 1360µohm rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN1R4-100ASEJ |
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Hersteller: Nexperia
MOSFETs PSMN1R4-100ASE/SOT8000A/CCPAK1
MOSFETs PSMN1R4-100ASE/SOT8000A/CCPAK1
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.01 EUR |
| 10+ | 10.78 EUR |
| 100+ | 8.73 EUR |
| 500+ | 7.77 EUR |
| 1000+ | 6.95 EUR |
| PSMN1R4-100ASEJ |
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Hersteller: Nexperia USA Inc.
Description: N-CHANNEL, 100 V, 1.36 MOHM, MOS
Packaging: Cut Tape (CT)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 25A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: CCPAK1212
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 366 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26023 pF @ 50 V
Description: N-CHANNEL, 100 V, 1.36 MOHM, MOS
Packaging: Cut Tape (CT)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 340A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 25A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: CCPAK1212
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 366 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 26023 pF @ 50 V
auf Bestellung 1842 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.26 EUR |
| 10+ | 11.04 EUR |
| 50+ | 8.81 EUR |
| 100+ | 8.09 EUR |
| 500+ | 7.47 EUR |
| PSMN1R4-100ASEJ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - PSMN1R4-100ASEJ - Leistungs-MOSFET, n-Kanal, 100 V, 340 A, 1360 µohm, CCPAK1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 340A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3.6V
Verlustleistung: 935W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: CCPAK1212
Anzahl der Pins: 12Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1360µohm
Description: NEXPERIA - PSMN1R4-100ASEJ - Leistungs-MOSFET, n-Kanal, 100 V, 340 A, 1360 µohm, CCPAK1212, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 340A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3.6V
Verlustleistung: 935W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: CCPAK1212
Anzahl der Pins: 12Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 1360µohm
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 27.64 EUR |
| 11+ | 21.11 EUR |
| 13+ | 16.68 EUR |
| 50+ | 13.36 EUR |
| 100+ | 13.23 EUR |
| 250+ | 12.98 EUR |
| PSMN1R4-100ASEJ |
|
Hersteller: NEXPERIA
Description: NEXPERIA - PSMN1R4-100ASEJ - Leistungs-MOSFET, n-Kanal, 100 V, 340 A, 1360 µohm, CCPAK1212, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
SVHC: Lead (25-Jun-2025)
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: N
hazardous: false
Drain-Source-Durchgangswiderstand: 1360µohm
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: NEXPERIA - PSMN1R4-100ASEJ - Leistungs-MOSFET, n-Kanal, 100 V, 340 A, 1360 µohm, CCPAK1212, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
SVHC: Lead (25-Jun-2025)
rohsCompliant: Y-EX
euEccn: NLR
isCanonical: N
hazardous: false
Drain-Source-Durchgangswiderstand: 1360µohm
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 27.64 EUR |
| 11+ | 21.11 EUR |
| 13+ | 16.68 EUR |
| 50+ | 13.36 EUR |
| 100+ | 13.23 EUR |
| 250+ | 12.98 EUR |