auf Bestellung 4840 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.72 EUR |
| 10+ | 5.65 EUR |
| 50+ | 5.51 EUR |
| 100+ | 4.54 EUR |
| 250+ | 4.45 EUR |
| 500+ | 4.03 EUR |
| 1000+ | 3.27 EUR |
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Technische Details PSMN1R5-40PS,127 Nexperia
Description: MOSFET N-CH 40V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V, Power Dissipation (Max): 338W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V.
Weitere Produktangebote PSMN1R5-40PS,127 nach Preis ab 5.80 EUR bis 8.73 EUR
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PSMN1R5-40PS,127 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 40V 120A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9710 pF @ 20 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN1R5-40PS,127 | Hersteller : NEXPERIA |
PSMN1R5-40PS.127 THT N channel transistors |
Produkt ist nicht verfügbar |