| Anzahl | Preis |
|---|---|
| 1+ | 5.21 EUR |
| 10+ | 4.19 EUR |
| 50+ | 3.24 EUR |
| 100+ | 2.68 EUR |
| 500+ | 2.62 EUR |
| 1000+ | 2.52 EUR |
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Technische Details PSMN1R8-30PL,127 Nexperia
Description: MOSFET N-CH 30V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V, Power Dissipation (Max): 270W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 12 V.
Weitere Produktangebote PSMN1R8-30PL,127 nach Preis ab 2.35 EUR bis 6.74 EUR
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PSMN1R8-30PL,127 | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 30V 100A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10180 pF @ 12 V |
auf Bestellung 4886 Stücke: Lieferzeit 10-14 Tag (e) |
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