PSMN1R9-80SSEJ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: APPLICATION SPECIFIC POWER MOSFE
Packaging: Tape & Reel (TR)
Package / Case: SOT-1235
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 286A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 340W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK88 (SOT1235)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17140 pF @ 40 V
| Anzahl | Preis |
|---|---|
| 2000+ | 4.04 EUR |
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Technische Details PSMN1R9-80SSEJ Nexperia USA Inc.
Description: APPLICATION SPECIFIC POWER MOSFE, Packaging: Tape & Reel (TR), Package / Case: SOT-1235, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 286A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V, Power Dissipation (Max): 340W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 1mA, Supplier Device Package: LFPAK88 (SOT1235), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 17140 pF @ 40 V.
Weitere Produktangebote PSMN1R9-80SSEJ nach Preis ab 4.28 EUR bis 11.14 EUR
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PSMN1R9-80SSEJ | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 286A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN1R9-80SSEJ | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 286A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN1R9-80SSEJ | Hersteller : Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN1R9-80SSEJ | Hersteller : Nexperia USA Inc. |
Description: APPLICATION SPECIFIC POWER MOSFE Packaging: Cut Tape (CT) Package / Case: SOT-1235 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 286A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Power Dissipation (Max): 340W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 1mA Supplier Device Package: LFPAK88 (SOT1235) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17140 pF @ 40 V |
Produkt ist nicht verfügbar |