auf Bestellung 1252 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 495+ | 0.29 EUR |
| 503+ | 0.28 EUR |
| 511+ | 0.26 EUR |
| 519+ | 0.25 EUR |
| 528+ | 0.23 EUR |
| 1000+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN2R0-25MLDX Nexperia
Description: MOSFET N-CH 25V 70A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 2.27mOhm @ 25A, 10V, FET Feature: Schottky Diode (Body), Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 34.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 12 V.
Weitere Produktangebote PSMN2R0-25MLDX nach Preis ab 0.21 EUR bis 0.77 EUR
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PSMN2R0-25MLDX | Hersteller : Nexperia |
 Trans MOSFET N-CH 25V 70A 8-Pin LFPAK EP T/R |
auf Bestellung 1252 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R0-25MLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 70A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 2.27mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 34.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 12 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R0-25MLDX | Hersteller : Nexperia |
MOSFETs SOT1210 N-CH 25V 70A |
auf Bestellung 2299 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R0-25MLDX | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 25V 70A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 2.27mOhm @ 25A, 10V FET Feature: Schottky Diode (Body) Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 34.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 12 V |
auf Bestellung 11493 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R0-25MLDX | Hersteller : Nexperia |
Trans MOSFET N-CH 25V 70A 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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PSMN2R0-25MLDX | Hersteller : NEXPERIA |
Trans MOSFET N-CH 25V 70A 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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PSMN2R0-25MLDX | Hersteller : Nexperia |
Trans MOSFET N-CH 25V 70A 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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PSMN2R0-25MLDX | Hersteller : Nexperia |
Trans MOSFET N-CH 25V 70A 8-Pin LFPAK EP T/R |
Produkt ist nicht verfügbar |
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| PSMN2R0-25MLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 70A Pulsed drain current: 555A Power dissipation: 74W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 34.4nC Kind of channel: enhancement Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| PSMN2R0-25MLDX | Hersteller : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A Type of transistor: N-MOSFET Technology: NextPowerS3 Polarisation: unipolar Drain-source voltage: 25V Drain current: 70A Pulsed drain current: 555A Power dissipation: 74W Case: LFPAK33; SOT1210 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 34.4nC Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |