| Anzahl | Preis |
|---|---|
| 109+ | 4.98 EUR |
| 500+ | 4.55 EUR |
| 1000+ | 4.14 EUR |
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Technische Details PSMN2R1-40PLQ Nexperia
Description: MOSFET N-CH 40V 150A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 9584 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 87.8 nC @ 5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 293W (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote PSMN2R1-40PLQ nach Preis ab 4.14 EUR bis 4.98 EUR
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PSMN2R1-40PLQ | Hersteller : Nexperia |
 Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R1-40PLQ | Hersteller : Nexperia |
Trans MOSFET N-CH 40V 150A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R1-40PLQ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 150A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 9584 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 87.8 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 293W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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PSMN2R1-40PLQ | Hersteller : Nexperia |
MOSFET PSMN2R1-40PL/SOT78/SIL3P |
Produkt ist nicht verfügbar |
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PSMN2R1-40PLQ | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 1075A Power dissipation: 293W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: THT Gate charge: 168.9nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |