| Anzahl | Preis |
|---|---|
| 113+ | 4.75 EUR |
| 500+ | 4.34 EUR |
| 1000+ | 3.94 EUR |
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Technische Details PSMN2R6-60PSQ Nexperia
Description: MOSFET N-CH 60V 150A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V, Power Dissipation (Max): 326W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7629 pF @ 25 V.
Weitere Produktangebote PSMN2R6-60PSQ nach Preis ab 2.6 EUR bis 5.32 EUR
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PSMN2R6-60PSQ | Hersteller : Nexperia |
 Trans MOSFET N-CH 60V 150A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 4826 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R6-60PSQ | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 150A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 2100 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R6-60PSQ | Hersteller : Nexperia |
Trans MOSFET N-CH 60V 150A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 3600 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R6-60PSQ | Hersteller : NXP USA Inc. |
Description: NOW NEXPERIA PSMN2R6-60PSQ - 150 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7629 pF @ 25 V |
auf Bestellung 304 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN2R6-60PSQ | Hersteller : Nexperia |
MOSFET PSMN2R6-60PS/SOT78/SIL3P |
auf Bestellung 4949 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN2R6-60PSQ | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 60V 150A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN2R6-60PSQ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 150A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 25A, 10V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7629 pF @ 25 V |
Produkt ist nicht verfügbar |
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PSMN2R6-60PSQ | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 961A Power dissipation: 326W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |