PSMN2R8-40BS,118 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 10A, 10V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4491 pF @ 20 V
| Anzahl | Preis |
|---|---|
| 150+ | 2.99 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN2R8-40BS,118 Nexperia USA Inc.
Description: NEXPERIA PSMN2R8-40BS - 100A, 40, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 10A, 10V, Power Dissipation (Max): 211W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4491 pF @ 20 V.
Weitere Produktangebote PSMN2R8-40BS,118 nach Preis ab 2.28 EUR bis 3.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PSMN2R8-40BS,118 | Hersteller : Nexperia USA Inc. |
Description: NEXPERIA PSMN2R8-40BS - 100A, 40 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 10A, 10V Power Dissipation (Max): 211W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4491 pF @ 20 V |
auf Bestellung 2125 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
PSMN2R8-40BS,118 | Hersteller : Nexperia |
MOSFET Std N-chanMOSFET |
auf Bestellung 202 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
| PSMN2R8-40BS,118 | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 5470 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
| PSMN2R8-40BS,118 | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 997 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
| PSMN2R8-40BS,118 | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 40V 100A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
| PSMN2R8-40BS,118 | Hersteller : NXP |
Description: NXP - PSMN2R8-40BS,118 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 6867 Stücke: Lieferzeit 14-21 Tag (e) |