PSMN2R8-40YSD/2X Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: PSMN2R8-40YSD/SOT669/LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 4507 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 147W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
FET Feature: Schottky Diode (Body)
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Technische Details PSMN2R8-40YSD/2X Nexperia USA Inc.
Description: PSMN2R8-40YSD/SOT669/LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 4507 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 3.6V @ 1mA, Power Dissipation (Max): 147W (Tc), Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 160A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR), FET Feature: Schottky Diode (Body).
Weitere Produktangebote PSMN2R8-40YSD/2X
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN2R8-40YSD/2X | Hersteller : Nexperia |
MOSFETs SOT669 N-CH 40V 160A |
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