Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN3R0-30YLDX Nexperia
Description: NEXPERIA - PSMN3R0-30YLDX - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 3100 µohm, PowerSO, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 30V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 100A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 1.7V, Verlustleistung: 91W, SVHC: Lead (25-Jun-2025), Bauform - Transistor: PowerSO, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 3100µohm.
Weitere Produktangebote PSMN3R0-30YLDX nach Preis ab 0.45 EUR bis 2.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
PSMN3R0-30YLDX | Nexperia |
 Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R |
auf Bestellung 4500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
PSMN3R0-30YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 15 V |
auf Bestellung 28500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
PSMN3R0-30YLDX | Nexperia |
MOSFETs SOT669 N-CH 30V 100A |
auf Bestellung 4663 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
PSMN3R0-30YLDX | Nexperia USA Inc. |
Description: MOSFET N-CH 30V 100A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V Power Dissipation (Max): 91W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 15 V |
auf Bestellung 29581 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
PSMN3R0-30YLDX | NEXPERIA |
Description: NEXPERIA - PSMN3R0-30YLDX - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 3100 µohm, PowerSO, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 91W SVHC: Lead (25-Jun-2025) Bauform - Transistor: PowerSO Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 3100µohm |
auf Bestellung 2832 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PSMN3R0-30YLDX |
|
Hersteller: Nexperia
Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
Trans MOSFET N-CH 30V 100A 5-Pin(4+Tab) LFPAK T/R
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.55 EUR |
| PSMN3R0-30YLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 15 V
auf Bestellung 28500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1500+ | 0.73 EUR |
| 3000+ | 0.67 EUR |
| 4500+ | 0.64 EUR |
| 7500+ | 0.61 EUR |
| 10500+ | 0.59 EUR |
| 15000+ | 0.57 EUR |
| PSMN3R0-30YLDX |
|
Hersteller: Nexperia
MOSFETs SOT669 N-CH 30V 100A
MOSFETs SOT669 N-CH 30V 100A
auf Bestellung 4663 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.71 EUR |
| 10+ | 1.22 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| 1500+ | 0.5 EUR |
| 3000+ | 0.45 EUR |
| PSMN3R0-30YLDX |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 15 V
Description: MOSFET N-CH 30V 100A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 25A, 10V
Power Dissipation (Max): 91W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 15 V
auf Bestellung 29581 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.53 EUR |
| 12+ | 1.6 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.84 EUR |
| PSMN3R0-30YLDX |
|
Hersteller: NEXPERIA
Description: NEXPERIA - PSMN3R0-30YLDX - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 3100 µohm, PowerSO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 91W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: PowerSO
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 3100µohm
Description: NEXPERIA - PSMN3R0-30YLDX - Leistungs-MOSFET, n-Kanal, 30 V, 100 A, 3100 µohm, PowerSO, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 100A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.7V
Verlustleistung: 91W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: PowerSO
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 3100µohm
auf Bestellung 2832 Stücke:
Lieferzeit 14-21 Tag (e)