PSMN3R3-100SSFJ Nexperia
Hersteller: Nexperia
MOSFETs NextPower 100 V, 3.3 mOhm, 180 Amp, N-channel MOSFET in LFPAK88 package
| Anzahl | Preis |
|---|---|
| 1+ | 7.27 EUR |
| 10+ | 4.82 EUR |
| 100+ | 3.77 EUR |
| 500+ | 3.34 EUR |
| 1000+ | 3.29 EUR |
| 2000+ | 2.78 EUR |
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Technische Details PSMN3R3-100SSFJ Nexperia
Description: NEXTPOWER 80/100V MOSFETS, Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Supplier Device Package: LFPAK88 (SOT1235), Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 341W (Ta), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1235, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN3R3-100SSFJ nach Preis ab 3.76 EUR bis 8.03 EUR
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PSMN3R3-100SSFJ | Hersteller : Nexperia USA Inc. |
Description: NEXTPOWER 80/100V MOSFETS Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 341W (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Cut Tape (CT) |
auf Bestellung 688 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN3R3-100SSFJ | Hersteller : Nexperia USA Inc. |
Description: NEXTPOWER 80/100V MOSFETS Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 341W (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |