PSMN3R3-100SSFJ Nexperia
Hersteller: Nexperia
MOSFETs NextPower 100 V, 3.3 mOhm, 180 Amp, N-channel MOSFET in LFPAK88 package
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.65 EUR |
| 10+ | 5.74 EUR |
| 100+ | 4.49 EUR |
| 500+ | 3.97 EUR |
| 1000+ | 3.92 EUR |
| 2000+ | 3.31 EUR |
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Technische Details PSMN3R3-100SSFJ Nexperia
Description: NEXTPOWER 80/100V MOSFETS, Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Supplier Device Package: LFPAK88 (SOT1235), Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 341W (Ta), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1235, Packaging: Tape & Reel (TR).
Weitere Produktangebote PSMN3R3-100SSFJ nach Preis ab 4.47 EUR bis 9.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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PSMN3R3-100SSFJ | Nexperia USA Inc. |
Description: NEXTPOWER 80/100V MOSFETS Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Supplier Device Package: LFPAK88 (SOT1235) Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 341W (Ta) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 180A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1235 Packaging: Cut Tape (CT) |
auf Bestellung 688 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN3R3-100SSFJ |
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Hersteller: Nexperia USA Inc.
Description: NEXTPOWER 80/100V MOSFETS
Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 341W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
Description: NEXTPOWER 80/100V MOSFETS
Input Capacitance (Ciss) (Max) @ Vds: 9940 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Supplier Device Package: LFPAK88 (SOT1235)
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 341W (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1235
Packaging: Cut Tape (CT)
auf Bestellung 688 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.56 EUR |
| 10+ | 6.31 EUR |
| 50+ | 4.93 EUR |
| 100+ | 4.47 EUR |