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PSMN3R3-40YS/2X

PSMN3R3-40YS/2X Nexperia USA Inc.


PSMN3R3-40YS.pdf
Hersteller: Nexperia USA Inc.
Description: PSMN3R3-40YS/SOT669/LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 2754 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 117W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
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Technische Details PSMN3R3-40YS/2X Nexperia USA Inc.

Description: PSMN3R3-40YS/SOT669/LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 2754 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 117W (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).

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PSMN3R3-40YS/2X PSMN3R3-40YS/2X Hersteller : Nexperia PSMN3R3_40YS-2939037.pdf MOSFET MOSFET-LOW VOLT SOT669/LFPAK
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