| Anzahl | Preis |
|---|---|
| 1+ | 4.93 EUR |
| 10+ | 4.14 EUR |
| 50+ | 3.89 EUR |
| 100+ | 3.34 EUR |
| 250+ | 3.15 EUR |
| 500+ | 2.97 EUR |
| 1000+ | 2.53 EUR |
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Technische Details PSMN3R3-60PLQ Nexperia
Description: MOSFET N-CH 60V 130A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 10115 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 293W (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote PSMN3R3-60PLQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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PSMN3R3-60PLQ | Hersteller : Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 130A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 10115 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 293W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
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