PSMN3R3-80ES,127 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: ELEMENT, NCHANNEL, SILICON, MOSF
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 338W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
| Anzahl | Preis |
|---|---|
| 217+ | 2.14 EUR |
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Technische Details PSMN3R3-80ES,127 Nexperia USA Inc.
Description: ELEMENT, NCHANNEL, SILICON, MOSF, Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 338W (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.
Weitere Produktangebote PSMN3R3-80ES,127
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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PSMN3R3-80ES,127 | Hersteller : Nexperia |
MOSFET N-Ch 80V 3.3 m std level MOSFET |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |