PSMN3R3-80ES,127 Nexperia USA Inc.
Hersteller: Nexperia USA Inc.Description: ELEMENT, NCHANNEL, SILICON, MOSF
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
auf Bestellung 1415 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 217+ | 2.14 EUR |
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Technische Details PSMN3R3-80ES,127 Nexperia USA Inc.
Description: ELEMENT, NCHANNEL, SILICON, MOSF, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V, Power Dissipation (Max): 338W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V.
Weitere Produktangebote PSMN3R3-80ES,127 nach Preis ab 2.49 EUR bis 2.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
|---|---|---|---|---|---|---|---|---|---|
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PSMN3R3-80ES,127 | Hersteller : Nexperia |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN3R3-80ES,127 | Hersteller : Nexperia |
MOSFET N-Ch 80V 3.3 m std level MOSFET |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN3R3-80ES,127 | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 1365 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN3R3-80ES,127 | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN3R3-80ES,127 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (27-Jun-2024) |
auf Bestellung 1415 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN3R3-80ES,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail |
Produkt ist nicht verfügbar |
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PSMN3R3-80ES,127 | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 120A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V |
Produkt ist nicht verfügbar |