| Anzahl | Privatkunde |
|---|---|
| 99+ | 6.81 EUR |
| 104+ | 6.38 EUR |
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Technische Details PSMN3R3-80ES,127 Nexperia
Description: ELEMENT, NCHANNEL, SILICON, MOSF, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V, Power Dissipation (Max): 338W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V.
Weitere Produktangebote PSMN3R3-80ES,127 nach Preis ab 3.88 EUR bis 7.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PSMN3R3-80ES,127 | Nexperia USA Inc. |
 Description: ELEMENT, NCHANNEL, SILICON, MOSFPackaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: I2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V |
auf Bestellung 1415 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN3R3-80ES,127 | Nexperia |
MOSFET N-Ch 80V 3.3 m std level MOSFET |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| PSMN3R3-80ES,127 | NEXPERIA |
Description: NEXPERIA - PSMN3R3-80ES,127 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: Lead (27-Jun-2024) |
auf Bestellung 1415 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN3R3-80ES,127 | NXP Semiconductors |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail |
auf Bestellung 1365 Stücke: Lieferzeit 14-21 Tag (e) |
|
| PSMN3R3-80ES,127 |
|
Hersteller: Nexperia USA Inc.
Description: ELEMENT, NCHANNEL, SILICON, MOSF
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
Description: ELEMENT, NCHANNEL, SILICON, MOSF
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
auf Bestellung 1415 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 78+ | 7.45 EUR |
| PSMN3R3-80ES,127 |
|
Hersteller: Nexperia
MOSFET N-Ch 80V 3.3 m std level MOSFET
MOSFET N-Ch 80V 3.3 m std level MOSFET
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| PSMN3R3-80ES,127 |
|
Hersteller: NEXPERIA
Description: NEXPERIA - PSMN3R3-80ES,127 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: Lead (27-Jun-2024)
Description: NEXPERIA - PSMN3R3-80ES,127 - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: Y-EX
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: Lead (27-Jun-2024)
auf Bestellung 1415 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 248+ | 3.88 EUR |
| PSMN3R3-80ES,127 |
|
Hersteller: NXP Semiconductors
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) I2PAK Rail
auf Bestellung 1365 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 99+ | 6.81 EUR |
| 104+ | 6.38 EUR |
| 500+ | 5.9 EUR |
| 1000+ | 5.45 EUR |