Produkte > NEXPERIA USA INC. > PSMN3R5-40YSBX
PSMN3R5-40YSBX

PSMN3R5-40YSBX Nexperia USA Inc.

PSMN3R5-40YSB.pdf
Hersteller: Nexperia USA Inc.
Description: PSMN3R5-40YSB/SOT669/LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
auf Bestellung 1435 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.11 EUR
14+1.33 EUR
100+0.88 EUR
500+0.68 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details PSMN3R5-40YSBX Nexperia USA Inc.

Description: PSMN3R5-40YSB/SOT669/LFPAK, Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 3.6V @ 1mA, Power Dissipation (Max): 115W (Tc), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).

Weitere Produktangebote PSMN3R5-40YSBX nach Preis ab 0.51 EUR bis 2.13 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PSMN3R5-40YSBX PSMN3R5-40YSBX Hersteller : Nexperia PSMN3R5-40YSB.pdf MOSFETs SOT669 N-CH 40V 120A
auf Bestellung 929 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.13 EUR
10+1.34 EUR
100+0.89 EUR
500+0.69 EUR
1000+0.6 EUR
1500+0.55 EUR
4500+0.51 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R5-40YSBX PSMN3R5-40YSBX Hersteller : Nexperia USA Inc. PSMN3R5-40YSB.pdf Description: PSMN3R5-40YSB/SOT669/LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH