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PSMN3R5-40YSDX

PSMN3R5-40YSDX Nexperia

PSMN3R5-40YSD.pdf
Hersteller: Nexperia
MOSFETs SOT669 N-CH 40V 120A
auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.38 EUR
10+1.53 EUR
50+1.1 EUR
100+0.98 EUR
1500+0.64 EUR
3000+0.59 EUR
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Technische Details PSMN3R5-40YSDX Nexperia

Description: MOSFET N-CH 40V 120A LFPAK56, Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 3.6V @ 1mA, Power Dissipation (Max): 115W (Tc), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).

Weitere Produktangebote PSMN3R5-40YSDX nach Preis ab 1.09 EUR bis 3.19 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
PSMN3R5-40YSDX PSMN3R5-40YSDX Hersteller : Nexperia USA Inc. PSMN3R5-40YSD.pdf Description: MOSFET N-CH 40V 120A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 20 V
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.19 EUR
10+2.03 EUR
100+1.37 EUR
500+1.09 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PSMN3R5-40YSDX PSMN3R5-40YSDX Hersteller : Nexperia USA Inc. PSMN3R5-40YSD.pdf Description: MOSFET N-CH 40V 120A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 115W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
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