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PSMN3R5-80PS,127

PSMN3R5-80PS,127 Nexperia


PSMN3R5-80PS.pdf
Hersteller: Nexperia
MOSFETs PSMN3R5-80PS/SOT78/SIL3P
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Technische Details PSMN3R5-80PS,127 Nexperia

Description: MOSFET N-CH 80V 120A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 338W (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.

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PSMN3R5-80PS,127 PSMN3R5-80PS,127 Hersteller : Nexperia USA Inc. PSMN3R5-80PS.pdf Description: MOSFET N-CH 80V 120A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 9961 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 338W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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PSMN3R5-80PS,127 PSMN3R5-80PS,127 Hersteller : NEXPERIA PSMN3R5-80PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 803A; 338W
Mounting: THT
Case: SOT78; TO220AB
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Gate charge: 139nC
On-state resistance: 7.2mΩ
Power dissipation: 338W
Gate-source voltage: ±20V
Pulsed drain current: 803A
Kind of channel: enhancement
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