PSMN3R9-60PSQ NEXPERIA
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
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Technische Details PSMN3R9-60PSQ NEXPERIA
Description: MOSFET N-CH 60V 130A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 263W (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote PSMN3R9-60PSQ nach Preis ab 2.36 EUR bis 5.49 EUR
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PSMN3R9-60PSQ | Nexperia |
MOSFET PSMN3R9-60PS/SOT78/SIL3P |
auf Bestellung 11929 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN3R9-60PSQ | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 130A TO220AB Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 4023 Stücke: Lieferzeit 10-14 Tag (e) |
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| PSMN3R9-60PSQ |
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Hersteller: Nexperia
MOSFET PSMN3R9-60PS/SOT78/SIL3P
MOSFET PSMN3R9-60PS/SOT78/SIL3P
auf Bestellung 11929 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.89 EUR |
| 10+ | 4.19 EUR |
| 100+ | 3.5 EUR |
| 500+ | 3.1 EUR |
| 1000+ | 2.46 EUR |
| 5000+ | 2.38 EUR |
| 10000+ | 2.36 EUR |
| PSMN3R9-60PSQ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 130A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 60V 130A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 4023 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.49 EUR |
| 10+ | 4.93 EUR |
| 100+ | 4.04 EUR |
| 500+ | 3.44 EUR |
| 1000+ | 2.9 EUR |
| 2000+ | 2.75 EUR |