PSMN3R9-60PSQ NEXPERIA
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 22+ | 3.33 EUR |
| 24+ | 3 EUR |
| 26+ | 2.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details PSMN3R9-60PSQ NEXPERIA
Description: NEXPERIA - PSMN3R9-60PSQ - Leistungs-MOSFET, n-Kanal, 60 V, 130 A, 0.00294 ohm, TO-220AB, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 130A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, MSL: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3V, euEccn: NLR, Verlustleistung: 263W, Bauform - Transistor: TO-220AB, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.00294ohm, SVHC: Lead (23-Jan-2024).
Weitere Produktangebote PSMN3R9-60PSQ nach Preis ab 2.36 EUR bis 5.49 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
PSMN3R9-60PSQ | Hersteller : Nexperia |
MOSFET PSMN3R9-60PS/SOT78/SIL3P |
auf Bestellung 11929 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
PSMN3R9-60PSQ | Hersteller : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 130A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V |
auf Bestellung 4023 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
PSMN3R9-60PSQ | Hersteller : NEXPERIA |
Description: NEXPERIA - PSMN3R9-60PSQ - Leistungs-MOSFET, n-Kanal, 60 V, 130 A, 0.00294 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 130A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 263W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00294ohm SVHC: Lead (23-Jan-2024) |
auf Bestellung 3240 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
PSMN3R9-60PSQ | Hersteller : NXP USA Inc. |
Description: TRANSISTOR >30MHZ Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V |
Produkt ist nicht verfügbar |