PSMN4R2-60PLQ Nexperia USA Inc.
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 130A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8533 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
| Anzahl | Preis |
|---|---|
| 4+ | 4.93 EUR |
| 10+ | 4.13 EUR |
| 100+ | 3.34 EUR |
| 500+ | 2.97 EUR |
| 1000+ | 2.55 EUR |
| 2000+ | 2.4 EUR |
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Technische Details PSMN4R2-60PLQ Nexperia USA Inc.
Description: MOSFET N-CH 60V 130A TO220AB, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 8533 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 263W (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 130A (Tc).
Weitere Produktangebote PSMN4R2-60PLQ nach Preis ab 2.39 EUR bis 5.26 EUR
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PSMN4R2-60PLQ | Hersteller : Nexperia |
MOSFET PSMN4R2-60PL/SOT78/SIL3P |
auf Bestellung 41 Stücke: Lieferzeit 10-14 Tag (e) |
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