| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.26 EUR |
| 10+ | 4.93 EUR |
| 50+ | 4.19 EUR |
| 100+ | 3.72 EUR |
| 250+ | 3.52 EUR |
| 500+ | 3.31 EUR |
| 1000+ | 2.84 EUR |
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Technische Details PSMN4R2-60PLQ Nexperia
Description: MOSFET N-CH 60V 130A TO220AB, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 8533 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 263W (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 130A (Tc).
Weitere Produktangebote PSMN4R2-60PLQ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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PSMN4R2-60PLQ | Nexperia USA Inc. |
 Description: MOSFET N-CH 60V 130A TO220ABFET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 8533 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 130A (Tc) |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PSMN4R2-60PLQ |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 130A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8533 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Description: MOSFET N-CH 60V 130A TO220AB
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 8533 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)