| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.83 EUR |
| 10+ | 5.9 EUR |
| 50+ | 5.89 EUR |
| 100+ | 4.94 EUR |
| 250+ | 4.88 EUR |
| 500+ | 4.41 EUR |
| 1000+ | 3.88 EUR |
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Technische Details PSMN4R3-100PS,127 Nexperia
Description: MOSFET N-CH 100V 120A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V, Power Dissipation (Max): 338W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V.
Weitere Produktangebote PSMN4R3-100PS,127 nach Preis ab 4.14 EUR bis 8.5 EUR
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PSMN4R3-100PS,127 | Nexperia USA Inc. |
 Description: MOSFET N-CH 100V 120A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V Power Dissipation (Max): 338W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V |
auf Bestellung 1884 Stücke: Lieferzeit 10-14 Tag (e) |
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PSMN4R3-100PS,127 | Nexperia |
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 4188 Stücke: Lieferzeit 14-21 Tag (e) |
|
| PSMN4R3-100PS,127 |
|
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
Description: MOSFET N-CH 100V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 338W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 50 V
auf Bestellung 1884 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8 EUR |
| 10+ | 6.72 EUR |
| 100+ | 5.44 EUR |
| 500+ | 4.83 EUR |
| 1000+ | 4.14 EUR |
| PSMN4R3-100PS,127 |
|
Hersteller: Nexperia
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB Rail
Trans MOSFET N-CH 100V 120A 3-Pin(3+Tab) TO-220AB Rail
auf Bestellung 4188 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 77+ | 8.5 EUR |
| 100+ | 7.95 EUR |
| 500+ | 7.38 EUR |
| 1000+ | 6.81 EUR |