PSMN4R3-80PS,127 NXP Semiconductors
Hersteller: NXP SemiconductorsDescription: NEXPERIA PSMN4R3-80PS - 120A, 80
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V
auf Bestellung 4206 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 207+ | 2.57 EUR |
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Technische Details PSMN4R3-80PS,127 NXP Semiconductors
Description: NEXPERIA PSMN4R3-80PS - 120A, 80, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 25A, 10V, Power Dissipation (Max): 306W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8161 pF @ 40 V.
Weitere Produktangebote PSMN4R3-80PS,127 nach Preis ab 2.87 EUR bis 5.93 EUR
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PSMN4R3-80PS,127 | Hersteller : Nexperia |
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PSMN4R3-80PS,127 | Hersteller : Nexperia |
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auf Bestellung 3309 Stücke: Lieferzeit 14-21 Tag (e) |
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| PSMN4R3-80PS,127 | Hersteller : NXP Semiconductors |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 686 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMN4R3-80PS,127 | Hersteller : NEXPERIA |
Trans MOSFET N-CH 80V 120A 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
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PSMN4R3-80PS,127 | Hersteller : NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 688A; 306W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 688A Power dissipation: 306W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 8.9mΩ Mounting: THT Gate charge: 111nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |